Gallium Nitride (GaN) wafers

Gallium Nitride (GaN) wafers are key components in a variety of applications, including power electronics, optoelectronics, and high-frequency devices. Here are some common specifications for GaN wafers:

P-GaN/N-GaN on Sapphire Specifications:

• Growth method :MOCVD/HVPE
• Conductivity : P-type/N+-type
• Dopant : Mg/Si
• GaN Thickness : 1-5 µm / 500nm-100 µm
• Concentration :>5E17 cm^-3 / >1E18 cm^-3
• Resistivity : < 0.05 Ohm-cm
• Surface :One side polished (SSP) / Double sides polished (DSP)
• Substrate Diameter :2’’/3’’/4’’ Sapphire wafer